tm november 2006 fdd8444 n-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation fdd8444 rev b (w) www.fairchildsemi.com 1 fdd8444 n-channel powertrench ? mosfet 40v, 50a, 5.2 m ? features ? typ r ds(on) = 4m ? at v gs = 10v, i d = 50a ? typ q g(10) = 89nc at v gs = 10v ? low miller charge ? low q rr body diode ? uis capability (single pulse/ repetitive pulse) ? qualified to aec q101 ? rohs compliant applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic transmission ? distributed power architecture and vrms ? primary switch for 12v systems l e a d f r e e m t a e l n t i o m p e n i
fdd8444 n-channel powertrench ? mosfet fdd8444 rev b (w) www.fairchildsemi.com 2 mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current continuous (v gs = 10v) (note 1) 145 a continuous (v gs = 10v, with r ja = 52 o c/w) 20 pulsed figure 4 e as single pulse avalanche energy (note 2) 535 mj p d power dissipation 153 w derate above 25 o c1.02w/ o c t j , t stg operating and storage temperature -55 to +175 o c r jc thermal resistance, junction to case 0.98 o c/w r ja thermal resistance, junction to ambient to-252, 1in 2 copper pad area 52 o c/w package marking and ordering information device marking device package reel size tape width quantity fdd8444 fdd8444 to-252aa 13? 12mm 2500 units electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss zero gate voltage drain current v ds = 32v - - 1 a v gs = 0v t j = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a22.54v r ds(on) drain to source on resistance i d = 50a, v gs = 10v - 4 5.2 m ? i d = 50a, v gs = 10v, t j = 175 o c -7.29.4 c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 6195 - pf c oss output capacitance - 585 - pf c rss reverse transfer capacitance - 332 - pf r g gate resistance f = 1mhz - 1.9 - ? q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 50a i g = 1.0ma -89116nc q g(5) total gate charge at 5v v gs = 0 to 5v 43 56 nc q g(th) threshold gate charge v gs = 0 to 2v - 11 14.3 nc q gs gate to source gate charge -23-nc q gs2 gate charge threshold to plateau - 11 - nc q gd gate to drain ?miller? charge - 20 - nc
fdd8444 n-channel powertrench ? mosfet fdd8444 rev b (w) www.fairchildsemi.com 3 electrical characteristics t j = 25 o c unless otherwise noted switching characteristics drain-source diode characteristics notes: 1: package current limitation is 50a. 2: starting t j = 25 o c, l = 0.67mh, i as = 40a symbol parameter test conditions min typ max units t on turn-on time v dd = 20v, i d = 50a v gs = 10v, r gs = 2 ? - - 135 ns t d(on) turn-on delay time - 12 - ns t r turn-on rise time - 78 - ns t d(off) turn-off delay time - 48 - ns t f turn-off fall time - 15 - ns t off turn-off time - - 95 ns v sd source to drain diode voltage i sd = 50a - 0.9 1.25 v i sd = 25a - 0.8 1.0 t rr reverse recovery time i f = 50a, di f /dt = 100a/ s -3951ns q rr reverse recovery charge - 45 59 nc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification.
fdd8444 n-channel powertrench ? mosfet fdd8444 rev b (w) www.fairchildsemi.com 4 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation muliplier t c , case temperature ( o c ) figure 2. 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 current limited by package v gs = 10v t c , case temperature ( o c ) i d , drain current (a) maximum continuous drain current vs case temperature figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 transconductance may limit current in this region v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) 2000 t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdd8444 n-channel powertrench ? mosfet fdd8444 rev b (w) www.fairchildsemi.com 5 figure 5. 1 10 100 0.1 1 10 100 1000 current limited by package 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc forward bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) 500 t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2.02.53.03.54.04.55.0 0 20 40 60 80 100 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.0 0.3 0.6 0.9 1.2 1.5 0 20 40 60 80 100 v gs = 4.5v pulse duration = 80 p s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) v gs = 10v v gs = 5v v gs = 4v saturation characteristics figure 9. 45678910 2 4 6 8 10 12 14 t j = 25 o c i d = 50a pulse duration = 80 p s duty cycle = 0.5% max t j = 175 o c r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pulse duration = 80 p s duty cycle = 0.5% max i d = 50a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized drain to source on resistance vs junction temperature typical characteristics
fdd8444 n-channel powertrench ? mosfet fdd8444 rev b (w) www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature ( o c ) normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 1.15 i d = 250 p a normalized drain to source breakdown voltage t j , junction temperature ( o c ) figure 13. 0.1 1 10 100 1000 10000 f = 1mhz v gs = 0v c rss c oss c iss v ds , drain to source voltage ( v ) capacitance (pf) 40 capacitance vs drain to source voltage figure 14. 0 20406080100 0 2 4 6 8 10 i d = 50a v dd = 25v v dd = 20v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 15v gate charge vs gate to source voltage typical characteristics
fdd8444 rev b (w) www.fairchildsemi.com 7 fdd8444 n-channel powertrench ? mosfet fairchild semiconductor trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks . disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reliability, functio n, or design. fairchild does not assu me any liability arising out of the application or use of any product or circuit describe d herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writte n approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, c an be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? ultrafet ? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet c ontains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i21
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